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| NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - NOVEMBER 1995 FEATURES * 180 Volt VCEO * Gain of 500 at IC=100mA * Very low saturation voltage APPLICATIONS * Darlington replacement * Battery powered circuits * Motor drivers * Relay / solenoid drivers ZTX696B C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation * Power Dissipation at Tamb=25C derate above 25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg 180 180 5 1 0.5 1.5 1 5.7 E-Line TO92 Compatible VALUE UNIT V V V A A W W mW/C C -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 500 150 3-247 MIN. 180 180 5 0.1 0.1 0.2 0.2 0.25 0.9 0.9 TYP. MAX. UNIT V V V A A CONDITIONS. IC=100A IC=10mA* IE=100A VCB=145V VEB=4V IC=50mA, IB=0.5mA* IC=100mA, IB=2mA* IC=200mA, IB=5mA* IC=200mA, IB=5mA* IC=200mA, VCE=5V* IC=100mA, VCE=5V* IC=200mA, VCE=5V* V V V V V ZTX696B ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Transition Frequency Input Capacitance Output Capacitance Switching Times SYMBOL fT Cibo Cobo ton toff MIN. 70 TYP. MAX. UNIT MHz pF pF ns ns CONDITIONS. IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCE=10V, f=1MHz IC=100mA, IB!=10mA IB2=10mA, VCC=50V 200 6 80 4400 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case SYMBOL Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) MAX. 175 116 70 UNIT C/W C/W C/W Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 3-248 ZTX696B TYPICAL CHARACTERISTICS IC/IB=100 IC/IB=50 IC/IB=10 Tamb=25C 0.8 -55C +25C +100C +175C 0.8 IC/IB=50 VCE(sat) - (Volts) 0.6 VCE(sat) - (Volts) 0.6 0.4 0.4 0.2 0.2 0 0.01 0.1 1 10 0 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 hFE - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 +100C +25C -55C VCE=5V 1.5K 1.6 hFE - Typical Gain VBE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -55C +25C +100C +175C IC/IB=50 1K 500 0.01 0.1 1 10 0 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 1 VBE(sat) v IC Single Pulse Test at Tamb=25C 1.6 1.4 IC - Collector Current (Amps) -55C +25C +100C +175C VCE=5V VBE - (Volts) 0.1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 1 10 0.01 0.001 1 10 100 1000 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-249 |
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